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| inchange semiconductor product specification silicon npn power transistors 2SD1789 description ? with ito-220 package ? switching power transistor ? darlington pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cm collector current-peak 6 a i b base current 0.3 a i bm base current-peak 0.5 a p t total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 5.0 ??/w fig.1 simplified outline (ito-220) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1789 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =1a; i b =2ma 1.5 v v besat base-emitter saturation voltage i c =1a; i b =2ma 2.0 v i cbo collector cut-off current v cb =200v; i e =0 0.1 ma i ceo collector cut-off current v ce =200v; i b =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 5 ma h fe dc current gain i c =1a ; v ce =3v 1500 30000 f t transition frequency i c =0.4a ; v ce =10v 20 mhz switching times t on turn-on time 2.0 | s t s storage time 12 | s t f fall time i c =1a;i b1 =i b2 =2ma, r l =25 |? v bb2 =4v 5.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD1789 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm) |
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